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| PD - 95194A INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features * Low VCE (on) Non Punch Through IGBT Technology. * Low Diode VF. * 10s Short Circuit Capability. * Square RBSOA. * Ultrasoft Diode Reverse Recovery Characteristics. * Positive VCE (on) Temperature Coefficient. * Lead-Free C IRGB15B60KDPbF IRGS15B60KDPBF IRGSL15B60KDPbF VCES = 600V IC = 15A, TC=100C G E tsc > 10s, TJ=150C n-channel VCE(on) typ. = 1.8V Benefits * Benchmark Efficiency for Motor Control. * Rugged Transient Performance. * Low EMI. * Excellent Current Sharing in Parallel Operation. TO-220AB D2Pak IRGS15B60KDPBF Absolute Maximum Ratings Parameter VCES IC @ TC = 25C IC @ TC = 100C ICM ILM IF @ TC = 25C IF @ TC = 100C IFM VGE PD @ TC = 25C PD @ TC = 100C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Forward Current Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. IRGB15B60KDPbF TO-262 IRGSL15B60KDPbF Max. 600 31 15 62 62 31 15 64 20 208 83 -55 to +150 300 (0.063 in. (1.6mm) from case) Units V A V W C Thermal Resistance Parameter RJC RJC RCS RJA RJA Wt Junction-to-Case - IGBT Junction-to-Case - Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Junction-to-Ambient (PCB Mount, steady state) Weight Min. --- --- --- --- --- --- Typ. --- --- 0.50 --- --- 1.44 Max. 0.6 2.1 --- 62 40 --- Units C/W g www.irf.com 10/03/05 1 IRGB/S/SL15B60KDPbF Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)CES V(BR)CES/TJ VCE(on) VGE(th) VGE(th)/TJ gfe ICES VFM IGES Min. 600 --- 1.5 --- --- Gate Threshold Voltage 3.5 Temperature Coeff. of Threshold Voltage --- Forward Transconductance --- Zero Gate Voltage Collector Current --- --- Diode Forward Voltage Drop --- --- Gate-to-Emitter Leakage Current --- Parameter Collector-to-Emitter Breakdown Voltage Temperature Coeff. of Breakdown Voltage Collector-to-Emitter Saturation Voltage Typ. --- 0.3 1.80 2.05 2.10 4.5 -10 10.6 5.0 500 1.20 1.20 --- Max. Units Conditions --- V VGE = 0V, IC = 500A --- V/C VGE = 0V, IC = 1.0mA, (25C-150C) 2.20 IC = 15A, VGE = 15V 2.50 V IC = 15A, VGE = 15V TJ = 125C 2.60 IC = 15A, VGE = 15V TJ = 150C 5.5 V VCE = VGE, IC = 250A --- mV/C VCE = VGE, IC = 1.0mA, (25C-150C) --- S VCE = 50V, IC = 20A, PW=80s 150 A VGE = 0V, VCE = 600V 1000 VGE = 0V, VCE = 600V, TJ = 150C 1.45 IC = 15A 1.45 V IC = 15A TJ = 150C 100 nA VGE = 20V Ref.Fig. 5, 6,7 9, 10,11 9, 10,11 12 8 Switching Characteristics @ TJ = 25C (unless otherwise specified) Qg Qge Qgc Eon Eoff Etot td(on) tr td(off) tf Eon Eoff Etot td(on) tr td(off) tf Cies Coes Cres RBSOA SCSOA Erec trr Irr Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Reverse Bias Safe Operting Area Short Circuit Safe Operting Area Reverse Recovery energy of the diode Diode Reverse Recovery time Diode Peak Reverse Recovery Current Min. --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- Ref.Fig. Max. Units Conditions 84 IC = 15A 10 nC VCC = 400V CT1 39 VGE = 15V CT4 330 J IC = 15A, VCC = 400V 455 VGE = 15V,RG = 22, L = 200H 785 Ls = 150nH TJ = 25C 44 IC = 15A, VCC = 400V 22 VGE = 15V, RG = 22, L = 200H CT4 200 ns Ls = 150nH, T J = 25C 26 CT4 470 IC = 15A, VCC = 400V 13,15 600 J VGE = 15V,RG = 22, L = 200H WF1WF2 1070 Ls = 150nH TJ = 150C 14, 16 44 IC = 15A, VCC = 400V CT4 25 VGE = 15V, RG = 22, L = 200H 226 ns Ls = 150nH, T J = 150C WF1 36 WF2 --- VGE = 0V --- pF VCC = 30V --- f = 1.0MHz 4 TJ = 150C, IC = 62A, Vp =600V FULL SQUARE VCC = 500V, VGE = +15V to 0V,RG = 22 CT2 CT3 s TJ = 150C, Vp =600V,RG = 22 10 --- --- WF4 VCC = 360V, VGE = +15V to 0V 17,18,19 --- 540 720 J TJ = 150C 20,21 --- 92 111 ns VCC = 400V, IF = 15A, L = 200H CT4,WF3 --- 29 33 A VGE = 15V,RG = 22, Ls = 150nH Typ. 56 7.0 26 220 340 560 34 16 184 20 355 490 835 34 18 203 28 850 75 35 Note to are on page 15 2 www.irf.com IRGB/S/SL15B60KDPbF 35 30 25 240 200 160 Ptot (W) 0 20 40 60 80 100 120 140 160 IC (A) 20 15 10 5 0 T C (C) 120 80 40 0 0 20 40 60 80 100 120 140 160 T C (C) 8 Fig. 1 - Maximum DC Collector Current vs. Case Temperature Fig. 2 - Power Dissipation vs. Case Temperature 100 100 10 IC (A) 10 s 10 100 s 1 DC 1ms 1 0.1 1 10 100 VCE (V) 1000 10000 IC A) 0 10 100 1000 VCE (V) Fig. 3 - Forward SOA TC = 25C; TJ 150C Fig. 4 - Reverse Bias SOA TJ = 150C; VGE =15V www.irf.com 3 IRGB/S/SL15B60KDPbF 100 90 80 70 ICE (A) 100 VGE VGE VGE VGE VGE = 18V = 15V = 12V = 10V = 8.0V ICE (A) 90 80 70 60 50 40 30 20 10 0 60 50 40 30 20 10 0 0 VGE VGE VGE VGE VGE = 18V = 15V = 12V = 10V = 8.0V 1 2 3 VCE (V) 4 5 6 0 1 2 3 VCE (V) 4 5 6 Fig. 5 - Typ. IGBT Output Characteristics TJ = -40C; tp = 300s Fig. 6 - Typ. IGBT Output Characteristics TJ = 25C; tp = 300s 100 90 80 70 ICE (A) 60 VGE VGE VGE VGE VGE = 18V = 15V = 12V = 10V = 8.0V IF (A) 50 40 30 20 10 0 -40C 25C 150C 60 50 40 30 20 10 0 0 1 2 3 VCE (V) 4 5 6 0.0 0.5 1.0 1.5 VF (V) 2.0 2.5 3.0 Fig. 7 - Typ. IGBT Output Characteristics TJ = 150C; tp = 300s Fig. 8 - Typ. Diode Forward Characteristics tp = 80s 4 www.irf.com IRGB/S/SL15B60KDPbF 20 18 16 14 VCE (V) VCE (V) 20 18 16 14 ICE = 5.0A ICE = 15A ICE = 30A 12 10 8 6 4 2 0 4 6 8 10 12 14 16 18 20 4 6 8 10 12 14 16 18 20 VGE (V) VGE (V) ICE = 5.0A ICE = 15A ICE = 30A 12 10 8 6 4 2 0 Fig. 9 - Typical VCE vs. VGE TJ = -40C Fig. 10 - Typical VCE vs. VGE TJ = 25C 20 18 16 14 VCE (V) ICE (A) 160 140 120 ICE = 5.0A ICE = 15A ICE = 30A 100 80 60 40 20 0 4 6 8 10 12 14 16 18 20 0 5 10 VGE (V) 15 20 VGE (V) T J = 150C T J = 25C T J = 25C T J = 150C 12 10 8 6 4 2 0 Fig. 11 - Typical VCE vs. VGE TJ = 150C Fig. 12 - Typ. Transfer Characteristics VCE = 50V; tp = 10s www.irf.com 5 IRGB/S/SL15B60KDPbF 1800 1600 1400 Energy (J) 1000 1000 800 600 400 200 0 0 10 EOFF EON Swiching Time (ns) 1200 tdOFF 100 tdON tF 10 0 tR 10 20 30 40 50 20 IC (A) 30 40 50 IC (A) Fig. 13 - Typ. Energy Loss vs. IC TJ = 150C; L=200H; VCE= 400V RG= 22; VGE= 15V Fig. 14 - Typ. Switching Time vs. IC TJ = 150C; L=200H; VCE= 400V RG= 22; VGE= 15V 900 800 700 600 1000 tdOFF EOFF EON Swiching Time (ns) Energy (J) 500 400 300 200 100 0 0 50 100 150 100 tdON tR tF 10 0 50 100 150 R G () R G () Fig. 15 - Typ. Energy Loss vs. RG TJ = 150C; L=200H; VCE= 400V ICE= 15A; VGE= 15V Fig. 16- Typ. Switching Time vs. RG TJ = 150C; L=200H; VCE= 600V ICE= 15A; VGE= 15V 6 www.irf.com IRGB/S/SL15B60KDPbF 35 40 RG = 10 30 35 30 25 25 RG = 22 RG = 47 RG = 68 IRR (A) 20 30 40 50 IRR (A) 20 20 15 10 5 0 15 RG = 100 10 5 0 10 0 20 40 60 80 100 120 IF (A) RG () Fig. 17 - Typical Diode IRR vs. IF TJ = 150C Fig. 18 - Typical Diode IRR vs. RG TJ = 150C; IF = 15A 35 30 25 3000 2500 2000 Q RR (C) 47 68 100 22 10 40A 30A IRR (A) 20 15 10 15A 10A 1500 1000 500 5 0 0 500 1000 1500 0 0 500 1000 1500 diF /dt (A/s) diF /dt (A/s) Fig. 19- Typical Diode IRR vs. diF/dt VCC= 400V; VGE= 15V; ICE= 15A; TJ = 150C Fig. 20 - Typical Diode QRR VCC= 400V; VGE= 15V;TJ = 150C www.irf.com 7 IRGB/S/SL15B60KDPbF 1000 900 800 700 10 22 47 100 Energy (J) 600 500 400 300 200 100 0 0 10 20 30 40 IF (A) Fig. 21 - Typical Diode ERR vs. IF TJ = 150C 10000 16 14 12 300V 400V Capacitance (pF) 1000 Cies VGE (V) 10 8 6 4 2 0 100 Coes Cres 10 0 20 40 60 80 100 0 20 40 60 VCE (V) Q G , Total Gate Charge (nC) Fig. 22- Typ. Capacitance vs. VCE VGE= 0V; f = 1MHz Fig. 23 - Typical Gate Charge vs. VGE ICE = 15A; L = 600H 8 www.irf.com IRGB/S/SL15B60KDPbF 1 Thermal Response ( Z thJC ) D = 0.50 0.20 0.10 0.05 0.01 0.02 J J 1 R1 R1 2 R2 R2 R3 R3 3 C 3 0.1 1 2 Ri (C/W) i (sec) 0.231 0.000157 0.175 0.000849 0.201 0.011943 0.01 Ci= i/Ri Ci i/Ri SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-6 1E-5 1E-4 1E-3 1E-2 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 1E-1 1E+0 t1 , Rectangular Pulse Duration (sec) Fig 24. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) 10 Thermal Response ( Z thJC ) 1 D = 0.50 0.20 0.10 0.1 0.05 0.01 0.02 J R1 R1 J 1 2 R2 R2 C Ri (C/W) i (sec) 1.164 0.000939 0.9645 0.035846 1 2 0.01 Ci= i/Ri Ci i/Ri SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-6 1E-5 1E-4 1E-3 1E-2 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 1E-1 1E+0 t1 , Rectangular Pulse Duration (sec) Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) www.irf.com 9 IRGB/S/SL15B60KDPbF L L 0 DUT 1K VCC 80 V + - DUT Rg 480V Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit Driver DC diode clamp / DUT L 360V - 5V DUT / DRIVER Rg DUT VCC Fig.C.T.3 - S.C.SOA Circuit VCC ICM Fig.C.T.4 - Switching Loss Circuit R= DUT Rg VCC Fig.C.T.5 - Resistive Load Circuit 10 www.irf.com IRGB/S/SL15B60KDPbF 600 tF 500 400 9 0 % IC E 30 25 20 500 50 400 40 300 VCE (V) 30 90% tes t current VCE (V) ICE (A) 5 % IC E 200 tes t current 20 200 5% V CE 10 5 0 -5 -0 .5 0 .0 0.5 t ( S ) 1.0 1 .5 100 100 0 -1 0 0 tR 10% tes t current 10 5% V C E 0 Eon Los s 0 E o ff L o s s -100 -0.2 -10 -0.1 t (S ) 0.0 0.1 WF.1- Typ. Turn-off Loss @ TJ = 150C using CT.4 100 QRR 0 tR R -1 0 0 VCE (V) 10 % Pe a k IR R WF.2- Typ. Turn-on Loss @ TJ = 150C using Fig. CT.4 20 500 250 10 400 V CE 200 0 VCE (V) 300 150 ICE (A) IC E ICE (A) -2 0 0 Pe a k IR R -1 0 200 100 -3 0 0 -2 0 100 50 -4 0 0 -3 0 0 0 -5 0 0 -0 . 0 6 -4 0 0 .0 4 t ( S ) 0 .1 4 -1 0 0 -1 0 0 10 t ( S ) 20 30 -5 0 WF.3- Typ. Reverse Recovery @ TJ = 150C using CT.4 WF.4- Typ. Short Circuit @ TJ = 150C using CT.3 www.irf.com ICE (A) 300 15 11 IRGB/S/SL15B60KDPbF TO-220AB Package Outline Dimensions are shown in millimeters (inches) TO-220AB Part Marking Information @Y6HQG@) UCDTADTA6IADSA A GPUA8P9@A &'( 6TT@H7G@9APIAXXA (A! DIAUC@A6TT@H7GAGDI@AA8A Ir)AAQAAvAhriyAyvrAvv vqvphrAAGrhqAAArrA DIU@SI6UDPI6G S@8UDAD@S GPBP 6TT@H7G GPUA8P9@ Q6SUAIVH7@S 96U@A8P9@ @6SAA2A! X@@FA ( GDI@A8 12 www.irf.com IRGB/S/SL15B60KDPbF Dimensions are shown in millimeters (inches) D2Pak Package Outline D2Pak Part Marking Information UCDTADTA6IADSA$"TAXDUC GPUA8P9@A'!# 6TT@H7G@9APIAXXA!A! DIAUC@A6TT@H7GAGDI@AAGA DIU@SI6UDPI6G S@8UDAD@S GPBP 6TT@H7G GPUA8P9@ Q6SUAIVH7@S A$"T 96U@A8P9@ @6SAA2A! X@@FA! GDI@AG 25 DIU@SI6UDPI6G S@8UDAD@S GPBP 6TT@H7G GPUA8P9@ A$"T Q6SUAIVH7@S 96U@A8P9@ QA2A9@TDBI6U@TAG@69AAAS@@ QSP9V8UAPQUDPI6G @6SAA2A! X@@FA! 6A2A6TT@H7GATDU@A8P9@ www.irf.com 13 IRGB/S/SL15B60KDPbF TO-262 Package Outline Dimensions are shown in millimeters (inches) TO-262 Part Marking Information @Y6HQG@) UCDTADTA6IADSG" "G GPUA8P9@A &'( 6TT@H7G@9APIAXXA (A ((& DIAUC@A6TT@H7GAGDI@AA8A Ir)AAQAAvAhriyAyvr vvAvqvphrAAGrhqArrA DIU@SI6UDPI6G S@8UDAD@S GPBP 6TT@H7G GPUA8P9@ Q6SUAIVH7@S 96U@A8P9@ @6SA&A2A ((& X@@FA ( GDI@A8 OR DIU@SI6UDPI6G S@8UDAD@S GPBP 6TT@H7G GPUA8P9@ Q6SUAIVH7@S 96U@A8P9@ QA2A9@TDBI6U@TAG@69AS@@ QSP9V8UAPQUDPI6G @6SA&A2A ((& X@@FA ( 6A2A6TT@H7GATDU@A8P9@ 14 www.irf.com IRGB/S/SL15B60KDPbF D2Pak Tape & Reel Information Dimensions are shown in millimeters (inches) TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) 1.60 (.063) 1.50 (.059) 0.368 (.0145) 0.342 (.0135) FEED DIRECTION 1.85 (.073) 1.65 (.065) 11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601) 24.30 (.957) 23.90 (.941) TRL 10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 16.10 (.634) 15.90 (.626) 4.72 (.136) 4.52 (.178) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) MAX. 60.00 (2.362) MIN. Notes: NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 30.40 (1.197) MAX. 26.40 (1.039) 24.40 (.961) 3 4 This is only applied to TO-220AB package This is applied to D2Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ). Energy losses include "tail" and diode reverse recovery. VCC = 80% (VCES ), VGE = 20V, L = 100H, RG = 22. For recommended footprint and soldering techniques refer to application note #AN-994. TO-220 package is not recommended for Surface Mount Application Data and specifications subject to change without notice. This product has been designed and qualified for Industrial market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.10/05 www.irf.com 15 |
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